Advanced germanium devices: The development of materials and processing

Leong, M, Johnson, B, Kandasamy, S, Holland, A, Gamble, H, Armstrong, M, Perova, T, McNeil, D, Rubanov, S and McCallum, J 2010, 'Advanced germanium devices: The development of materials and processing', in A/Prof. Hark Hoe Tan (ed.) 2010 Conference on Optoelectronic and Microeletronic Materials and Devices: COMMAD 2010 Proceedings, Canberra, Australia, 12-15 December, 2010, pp. 171-172.


Document type: Conference Paper
Collection: Conference Papers

Title Advanced germanium devices: The development of materials and processing
Author(s) Leong, M
Johnson, B
Kandasamy, S
Holland, A
Gamble, H
Armstrong, M
Perova, T
McNeil, D
Rubanov, S
McCallum, J
Year 2010
Conference name 2010 Conference on Optoelectronic and Microeletronic Materials and Devices (COMMAD 2010)
Conference location Canberra, Australia
Conference dates 12-15 December, 2010
Proceedings title 2010 Conference on Optoelectronic and Microeletronic Materials and Devices: COMMAD 2010 Proceedings
Editor(s) A/Prof. Hark Hoe Tan
Publisher IEEE
Place of publication New Jersey, USA
Start page 171
End page 172
Total pages 2
Abstract The development and optimisation of materials and processes used for germanium metal-oxide-semiconductor devices are investigated. The gate oxide and the source-drain are examined using electrical and optical techniques.
Subjects Electrical and Electronic Engineering not elsewhere classified
DOI - identifier 10.1109/COMMAD.2010.5699722
Copyright notice © 2010 IEEE
ISBN 9781424473328
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