A Radiation Hard Configuration Memory with Auto-Scrubbing

Haque, K and Beckett, P 2011, 'A Radiation Hard Configuration Memory with Auto-Scrubbing', in Xinghuo Yu, Tharam Dillon (ed.) IECON Proceedings (Industrial Electronics Conference), Melbourne, Australia, 7-10 Nov. 2011, pp. 4648-4653.

Document type: Conference Paper
Collection: Conference Papers

Title A Radiation Hard Configuration Memory with Auto-Scrubbing
Author(s) Haque, K
Beckett, P
Year 2011
Conference name 37th Annual Conference on IEEE Industrial Electronics Society
Conference location Melbourne, Australia
Conference dates 7-10 Nov. 2011
Proceedings title IECON Proceedings (Industrial Electronics Conference)
Editor(s) Xinghuo Yu, Tharam Dillon
Publisher IEEE
Place of publication Melbourne, Australia
Start page 4648
End page 4653
Total pages 6
Abstract We describe and analyze a non-volatile configuration memory system with high resistance to radiation induced upsets. Built using a standard single-polysilicon Silicon on Insulator CMOS process, a non-volatile EEPROM is linked to a Schmitt sense amplifier that results in a memory system with very low probability of experiencing radiation-induced upsets that permanently flip its output value. We show how the cell can be set up to be self correcting, exhibiting so-called "auto-scrubbing" behavior. While the memory is largely immune to permanent changes from single, isolated events, it is still possible for a sequence of two particle strikes to permanently upset the configuration value. We make some estimates of the SEU rate of the two components of the memory as a first step to calculating the overall SER of the overall memory block.
Subjects Microelectronics and Integrated Circuits
Industrial Electronics
Keyword(s) SOI
Radiation hard
configuration memory
DOI - identifier 10.1109/IECON.2011.6120077
Copyright notice © 2011 IEEE
ISBN 9781612849720
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