Top-down pathways to devices with few and single atoms placed to high precision

Donkelaar, J, Greentree, A, Alves, A, Long, L, Hollenberg, L and Jamieson, D 2010, 'Top-down pathways to devices with few and single atoms placed to high precision', New Journal of Physics, vol. 12, no. 6, 065016, pp. 1-19.


Document type: Journal Article
Collection: Journal Articles

Attached Files
Name Description MIMEType Size
n2006032366.pdf Published Version application/pdf 1.59MB
Title Top-down pathways to devices with few and single atoms placed to high precision
Author(s) Donkelaar, J
Greentree, A
Alves, A
Long, L
Hollenberg, L
Jamieson, D
Year 2010
Journal name New Journal of Physics
Volume number 12
Issue number 6
Article Number 065016
Start page 1
End page 19
Total pages 19
Publisher Institute of Physics Publishing
Abstract Solid-state devices that employ few and single atoms are emerging as a consequence of technological advances in classical microelectronics and proposals for quantum computers based on spin or charge. The fabrication of devices in both these areas requires the development of techniques for deterministic doping of silicon where few or single dopant atoms must be placed to, typically, nanometre precision. Here we discuss a top-down approach, based on deterministic ion implantation, which can potentially be used to fabricate devices intended to explore the novel challenges of designing, building and measuring solid-state devices at the single atom limit. In particular, we address the potential of fabricating more complex devices that exploit quantum coherence. We propose a prototype triple-donor device that transports electron spin qubits via the coherent tunnelling by adiabatic passage (CTAP) protocol for a scalable quantum computer. We examine theoretically the statistics of dopant placement using ion implantation by employing an analytical treatment of CTAP transport properties under hydrogenic assumptions. We evaluate the probability of fabricating proof of concept devices subject to the limitations of ion implantation. We find that the results are promising with a yield of one in six for 14keV phosphorus implanted into silicon with a target atom site spacing of 30 nm with even higher yields possible for lower-energy implants. This suggests that deterministic doping is an important tool to fabricate and test near-term practical quantum coherent devices
Subject Quantum Information, Computation and Communication
Condensed Matter Physics not elsewhere classified
Nanoelectronics
DOI - identifier 10.1088/1367-2630/12/6/065016
Copyright notice © 2010 Institute of Physics Publishing
ISSN 1367-2630
Versions
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 16 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 18 times in Scopus Article | Citations
Altmetric details:
Access Statistics: 154 Abstract Views, 57 File Downloads  -  Detailed Statistics
Created: Fri, 25 May 2012, 12:57:00 EST by Catalyst Administrator
© 2014 RMIT Research Repository • Powered by Fez SoftwareContact us