Techniques for the design of a low noise, high dynamic range, high gain, wideband amplifier for analogue OEIC applications

Taher, S 2014, Techniques for the design of a low noise, high dynamic range, high gain, wideband amplifier for analogue OEIC applications, Doctor of Philosophy (PhD), Electrical and Computer Engineering, RMIT University.


Document type: Thesis
Collection: Theses

Attached Files
Name Description MIMEType Size
Taher.pdf Thesis Click to show the corresponding preview/stream application/pdf;... 2.40MB
Title Techniques for the design of a low noise, high dynamic range, high gain, wideband amplifier for analogue OEIC applications
Author(s) Taher, S
Year 2014
Abstract Various techniques for the Design of a Low Noise, High Dynamic Range, High Gain, Wideband Amplifier for Analogue OEIC Applications, such as radar receiver arrays for electronic warfare applications were developed and investigated in this work.

Firstly, the available transistor technologies, semiconductor technologies and photodetector technologies and their pros and cons in light of the target application type are investigated in order to decide on the technologies best suited for this research, and justification of the chosen options are presented.

Secondly, three different known amplifier topologies are discussed and their linearity, gain, bandwidth, SFDR, and other performances are compared via simulations calibrated against measured results. The results from the comparisons are analysed and the amplifier topology most suitable for this work is chosen based on these results.

Thirdly, three different circuit alteration techniques for improving the linearity and SFDR of the previously chosen amplifier topology are developed, analysed and verified through simulations. It is shown that these techniques can be combined to gain further improvement in overall performance.

And finally, the influence of various geometrical and doping alterations of the transistor on desired figures of merit, i.e. gain, bandwidth, linearity, etc. are investigated in detail using two-dimensional physical device simulations calibrated against measured results of an InP/InGaAs single heterojunction bipolar transistor. The device simulations were carried out using Technology-Computer-Aided-Design (TCAD) within the SILVACO software package. The results are then used to suggest techniques to improve performance at the transistor level.
Degree Doctor of Philosophy (PhD)
Institution RMIT University
School, Department or Centre Electrical and Computer Engineering
Keyword(s) linearit
HBT
SFDR
dynamic range
OEIC
Versions
Version Filter Type
Access Statistics: 253 Abstract Views, 565 File Downloads  -  Detailed Statistics
Created: Mon, 11 May 2015, 14:24:33 EST by Denise Paciocco
© 2014 RMIT Research Repository • Powered by Fez SoftwareContact us