Modelling the electronic properties of zero-, one-, and two-dimensional phosphorus systems in semiconductors

Smith, J 2016, Modelling the electronic properties of zero-, one-, and two-dimensional phosphorus systems in semiconductors, Doctor of Philosophy (PhD), Applied Science, RMIT University.


Document type: Thesis
Collection: Theses

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Title Modelling the electronic properties of zero-, one-, and two-dimensional phosphorus systems in semiconductors
Author(s) Smith, J
Year 2016
Abstract The electronic properties of phosphorus delta-doped structures in silicon, and germanium, are studied using a variety of theoretical approaches. The importance of such phosphorus systems cannot be understated. They can be structurally confined in one, two, or three dimensions. They are so small, their dimensions can sensibly be measured in nanometers. Their electronic properties make them excellent candidates for the next generation of devices in semiconductors. And yet, although these structures can easily be made in the laboratory, there is still much that we do not understand about them. In this thesis, we have used density-functional theory, the nonequilibrium Green's function formalism, and empirical tight-binding theory to model the electronic properties of these structures. Through the combination of these techniques we have been able to improve the current understanding of these novel semiconductor systems.
Degree Doctor of Philosophy (PhD)
Institution RMIT University
School, Department or Centre Applied Science
Keyword(s) Phosphorus in silicon
Density functional theory
Nonequilibrium Green's function formalism
Electronic properties
Electron transport
Delta doping
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Created: Thu, 29 Sep 2016, 13:41:45 EST by Denise Paciocco
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