Modelling the fabrication and electronic properties of aluminium oxide tunnel junctions

Cyster, M 2018, Modelling the fabrication and electronic properties of aluminium oxide tunnel junctions, Doctor of Philosophy (PhD), Science, RMIT University.


Document type: Thesis
Collection: Theses

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Title Modelling the fabrication and electronic properties of aluminium oxide tunnel junctions
Author(s) Cyster, M
Year 2018
Abstract Aluminium based tunnel junctions are currently used as elements in superconducting circuits for the construction of qubits and other mesoscopic electronics. Material defects have been observed in tunnel junctions for many years and manifest in the energetics of the device as two-level systems. A large number of models have been proposed to explain the microscopic origin of the observed two-level system physics.

In this work we simulate the fabrication of junctions using large scale molecular dynamics simulations and investigate their structural properties. By developing a model for electronic transport in three-dimensions based on the non-equilibrium Green function formalism we are then able to link the atomic positions and charges with the normal-state resistance of the tunnelling barrier. The methodology we develop allows for different material defects models to be included in the calculation. Insight is gained into how the electronic properties of the junction are affected by both small and large changes in its structure.
Degree Doctor of Philosophy (PhD)
Institution RMIT University
School, Department or Centre Science
Subjects Electronic and Magnetic Properties of Condensed Matter; Superconductivity
Condensed Matter Modelling and Density Functional Theory
Quantum Information, Computation and Communication
Keyword(s) computational physics
electronic transport
molecular dynamics
tunnel junctions
condensed matter
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Created: Wed, 06 Feb 2019, 12:52:25 EST by Keely Chapman
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