Fabrication and characterization of high-quality uniform and apodized Si 3N 4 waveguide gratings using laser interference lithography

Hopman, W, Dekker, R, Yudistira, D, Engbers, W, Hoekstra, H and Ridder, R 2006, 'Fabrication and characterization of high-quality uniform and apodized Si 3N 4 waveguide gratings using laser interference lithography', IEEE Photonics Technology Letters, vol. 18, no. 1720, pp. 1855-1857.


Document type: Journal Article
Collection: Journal Articles

Title Fabrication and characterization of high-quality uniform and apodized Si 3N 4 waveguide gratings using laser interference lithography
Author(s) Hopman, W
Dekker, R
Yudistira, D
Engbers, W
Hoekstra, H
Ridder, R
Year 2006
Journal name IEEE Photonics Technology Letters
Volume number 18
Issue number 1720
Start page 1855
End page 1857
Total pages 3
Publisher Institute of Electrical and Electronics Engineers
Abstract A method is presented for fabricating high-quality ridge waveguide gratings by combining conventional mask lithography with laser interference lithography. The method, which allows for apodization functions modulating both amplitude and phase of the grating is demonstrated by fabricating a grating that is chirped by width-variation of the grated ridge waveguide. The structure was optically characterized using both an end-fire and an infrared camera setup to measure the transmission and to map and quantify the power scattered out of the grating, respectively. For a uniform grating, we found a Q value of similar to 8000 for the resonance peak near the lower wavelength band edge, which was almost completely suppressed after apodization
Subject Photonics, Optoelectronics and Optical Communications
Keyword(s) electromagnetic scattering by periodic structures
gratings
optical device fabrication
optical wave-guide filters
ridge waveguides
DOI - identifier 10.1109/LPT.2006.881226
Copyright notice © 2006 IEEE
ISSN 1041-1135
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