A Pt/Ga2O3/SiC Schottky diode based hydrocarbon gas sensor

Trinchi, A, Galatsis, K, Wlodarski, W and Li, Y 2002, 'A Pt/Ga2O3/SiC Schottky diode based hydrocarbon gas sensor', in Proceedings of IEEE Sensors 2002, Orlando, USA, 12-14 June 2002.


Document type: Conference Paper
Collection: Conference Papers

Title A Pt/Ga2O3/SiC Schottky diode based hydrocarbon gas sensor
Author(s) Trinchi, A
Galatsis, K
Wlodarski, W
Li, Y
Year 2002
Conference name International Conference on Sensors
Conference location Orlando, USA
Conference dates 12-14 June 2002
Proceedings title Proceedings of IEEE Sensors 2002
Publisher IEEE
Place of publication New York, USA
Abstract This paper presents the propene gas sensing performance of Pt/Ga2O3/SiC based Schottky diodes. The metal oxide semiconducting Ga2O3 thin films were doped with Zn and prepared by the sol-gel process. The thin films were deposited onto the SiC by the spin coating technique and a Pt layer was deposited on the top of the metal oxide forming the Schottky diode. The sensor responses were stable and repeatable towards propene at operating temperatures between 300 and 600°C. The diodes were biased at a constant current of 2 mA. When exposed to 1,900 ppm of propene at an operating temperature of 525°C, a shift of 85 mV was observed.
Subjects Colloid and Surface Chemistry
Keyword(s) Schottky diodes
semiconductors
DOI - identifier 10.1109/JSEN.2003.817670
Copyright notice © 2003 IEEE
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