Pt/adonized TiO2/SiC based MOS device for hydrocarbon sensing

Shafiei, M, Sadek, A, Yu, J, Arsat, R, Kalantar-Zadeh, K, Yu, X, Partridge, J and Wlodarski, W 2008, 'Pt/adonized TiO2/SiC based MOS device for hydrocarbon sensing', in Proceedings of SPIE 7268 - Smart Structures, Devices and Systems IV, Melbourne, Australia, 9-12 December, 2008.

Document type: Conference Paper
Collection: Conference Papers

Title Pt/adonized TiO2/SiC based MOS device for hydrocarbon sensing
Author(s) Shafiei, M
Sadek, A
Yu, J
Arsat, R
Kalantar-Zadeh, K
Yu, X
Partridge, J
Wlodarski, W
Year 2008
Conference name 2008 SPIE InternationalSymposium on Smart Materials, Nano+Micro-Smart Marterials
Conference location Melbourne, Australia
Conference dates 9-12 December, 2008
Proceedings title Proceedings of SPIE 7268 - Smart Structures, Devices and Systems IV
Publisher SPIE
Place of publication Melbourne, Australia
Abstract Pt/anodized TiO2/SiC based metal-oxide-semiconductor (MOS) devices were fabricated and characterized for their sensitivity towards propene (C3H6). Titanium (Ti) thin films were deposited onto the SiC substrates using a filtered cathodic vacuum arc (FCVA) method. Fluoride ions containing neutral electrolyte (0.5 wt% NH4F in ethylene glycol) were used to anodize the Ti films. The anodized films were subsequently annealed at 600 °C for 4 hrs in an oxygen rich environment to obtain TiO2. The current-voltage (I-V) characteristics of the Pt/TiO2/SiC devices were measured in different concentrations of propene. Exposure to the analyte gas caused a change in the Schottky barrier height and hence a lateral shift in the I-V characteristics. The effective change in the barrier height for 1% propene was calculated as 32.8 meV at 620°C. The dynamic response of the sensors was also investigated and a voltage shift of 157 mV was measured at 620°C during exposure to 1% propene.
Subjects Nanoelectronics
DOI - identifier 10.1117/12.810108
Copyright notice © 2008 SPIE ---The International Society for Optical Engineering
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