Applications of tetrahedral amorphous carbon in limited volatility memory and in field programmable gate arrays

Mckenzie, D, Li, W, Gerstner, E, Merchant, A, McCulloch, D, Marks, N and Bilek, M 2001, 'Applications of tetrahedral amorphous carbon in limited volatility memory and in field programmable gate arrays', Diamond and Related Materials, vol. 10, no. 2, pp. 230-233.


Document type: Journal Article
Collection: Journal Articles

Title Applications of tetrahedral amorphous carbon in limited volatility memory and in field programmable gate arrays
Author(s) Mckenzie, D
Li, W
Gerstner, E
Merchant, A
McCulloch, D
Marks, N
Bilek, M
Year 2001
Journal name Diamond and Related Materials
Volume number 10
Issue number 2
Start page 230
End page 233
Total pages 3
Publisher Elsevier
Abstract Modification of tetrahedral amorphous carbon by nitrogen addition or by heating has important effects on its electrical conductivity. In the case of nitrogen addition at a level of approximately 3% a new conductivity mode is introduced which can be turned off by electrical bias. This mode can be used to form a memory device. Using first principles molecular dynamics simulations in the local density approximation and local spin density approximation, we study the structural changes resulting when an electron is removed from the nitrogen atom. Heating also changes the electrical conductivity in a permanent way, producing a thermodynamically stable form of carbon with a high degree of sp2 bonding. We show that this effect can be used in producing permanent connections between two metal layers in a structure known as an antifuse, and that tetrahedral amorphous carbon is far superior in this application to other choices such as silicon nitride, aluminium nitride and amorphous silicon.
Copyright notice © 2001 Elsevier Science
ISSN 0925-9635
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