Fabrication, structural characterization and testing of nanostructured tin oxide gas sensor

Partridge, J, Field, M, Sadek, A, Kalantar-Zadeh, K, Du Plessis, J, Taylor, M, Atanacio, A, Prince, K and McCulloch, D 2009, 'Fabrication, structural characterization and testing of nanostructured tin oxide gas sensor', IEEE Sensors Journal, vol. 9, no. 5, pp. 563-568.

Document type: Journal Article
Collection: Journal Articles

Attached Files
Name Description MIMEType Size
n2006017369.pdf Published version application/pdf 1.48MB
Title Fabrication, structural characterization and testing of nanostructured tin oxide gas sensor
Author(s) Partridge, J
Field, M
Sadek, A
Kalantar-Zadeh, K
Du Plessis, J
Taylor, M
Atanacio, A
Prince, K
McCulloch, D
Year 2009
Journal name IEEE Sensors Journal
Volume number 9
Issue number 5
Start page 563
End page 568
Total pages 6
Publisher American Scientific Publishers
Abstract A nanostructured SnO2 conductometric gas sensor was produced from thermally evaporated Sn clusters using a thermal oxidation process. SnO2 clusters were simultaneously formed in an identical process on a Si3N4 membrane featuring an aperture created by a focused ion beam (FIB). Clusters attached to the vertical edges of the aperture were imaged using a transmission electron microscope. The original morphology of the Sn cluster film was largely preserved after the thermal oxidation process and the thermally oxidized clusters were found to be polycrystalline and rutile in structure. NO2 gas sensing measurements were performed with the sensor operating at various temperatures between 25degC and 290degC. At an operating temperature of 210degC, the sensor demonstrated a normalized change in resistance of 3.1 upon exposure to 510 ppb of NO2 gas. The minimum response and recovery times for this exposure were 45 s and 30 s at an operating temperature of 265degC. The performance of the SnO2 sensor compared favorably with previously published results. Finally, secondary ion mass spectrometry and X-ray photoelectron spectroscopy were used to establish the levels of nitrogen present in the films following exposure to NO2 gas.
Subject Nanometrology
Keyword(s) gas detectors
thin-film devices
DOI - identifier 10.1109/JSEN.2009.2016613
Copyright notice © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
ISSN 1530-437X
Version Filter Type
Altmetric details:
Access Statistics: 236 Abstract Views, 788 File Downloads  -  Detailed Statistics
Created: Tue, 30 Mar 2010, 13:27:55 EST by Catalyst Administrator
© 2014 RMIT Research Repository • Powered by Fez SoftwareContact us