Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells

Yu, Z, Perera, R, Daeneke, T, Makuta, S, Tachibana, Y, Jasieniak, J, Mishra, A, Bäuerle, P, Spiccia, L and Bach, U 2016, 'Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells', NPG Asia Materials, vol. 8, E305, pp. 1-7.


Document type: Journal Article
Collection: Journal Articles

Title Indium tin oxide as a semiconductor material in efficient p-type dye-sensitized solar cells
Author(s) Yu, Z
Perera, R
Daeneke, T
Makuta, S
Tachibana, Y
Jasieniak, J
Mishra, A
Bäuerle, P
Spiccia, L
Bach, U
Year 2016
Journal name NPG Asia Materials
Volume number 8
Article Number E305
Start page 1
End page 7
Total pages 7
Publisher Nature
Abstract Indium tin oxide (ITO) is a well-known n-type degenerate semiconductor with a wide variety of electronic and optoelectronic applications. Herein ITO is utilized as a photocathode material in p-type dye-sensitized solar cells in place of the commonly applied and highly colored nickel oxide (NiO) semiconductor. The application of mesoporous ITO photocathodes, [Fe(acac)3] 0/ - as a redox mediator and a new organic dye afforded an impressive energy conversion efficiency of 1.96 ± 0.12%. Comparative transient absorption spectroscopic studies indicated that the recombination rate at the ITO-electrolyte interface is two orders of magnitude faster than that of NiO. Analysis of the operation mechanism of the ITO-based devices with ultraviolet photon spectroscopy and photoelectron spectroscopy in air showed that ITO exhibits a significant local density of states arising below - 4.8 eV, which enables electron transfer to occur from the ITO to the excited dye, thus giving rise to the sustained photocathodic current.
Subject Chemical Thermodynamics and Energetics
Keyword(s) Thin-films
depositoin
devices
IN2O3
TIO2
DOI - identifier 10.1038/am.2016.89
Copyright notice © The Author(s) 2016, Creative Commons License
ISSN 1884-4057
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