Influence of nanoscale topology on bactericidal efficiency of black silicon surfaces

Linklater, D, Nguyen, H, Bhadra, C, Juodkazis, S and Ivanova, E 2017, 'Influence of nanoscale topology on bactericidal efficiency of black silicon surfaces', Nanotechnology, vol. 28, no. 28, pp. 1-9.


Document type: Journal Article
Collection: Journal Articles

Title Influence of nanoscale topology on bactericidal efficiency of black silicon surfaces
Author(s) Linklater, D
Nguyen, H
Bhadra, C
Juodkazis, S
Ivanova, E
Year 2017
Journal name Nanotechnology
Volume number 28
Issue number 28
Start page 1
End page 9
Total pages 9
Publisher Institute of Physics Publishing Ltd.
Abstract The nanostructuring of materials to create bactericidal and antibiofouling surfaces presents an exciting alternative to common methods of preventing bacterial adhesion. The fabrication of synthetic bactericidal surfaces has been inspired by the anti-wetting and anti-biofouling properties of insect wings, and other topologies found in nature. Black silicon is one such synthetic surfaces which has established bactericidal properties. In this study we show that time-dependent plasma etching of silicon wafers using 15, 30, and 45 min etching intervals, is able to produce different surface geometries with linearly increasing heights of approximately 280, 430, and 610 nm, respectively. After incubation on these surfaces with Gram-positive Staphylococcus aureus and Gram-negative Pseudomonas aeruginosa bacterial cells it was established that smaller, more densely packed pillars exhibited the greatest bactericidal activity with 85% and 89% inactivation of bacterial cells, respectively. The decrease in the pillar heights, pillar cap diameter and inter-pillar spacing corresponded to a subsequent decrease in the number of attached cells for both bacterial species.
Subject Microbiology not elsewhere classified
Keyword(s) bactericidal
black silicon
nanofabrication
reactive ion etching
DOI - identifier 10.1088/1361-6528/aa700e
Copyright notice © 2017 IOP Publishing Ltd
ISSN 0957-4484
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