Simulation of graphitic contacts to p-type Si using a metal-resistor-semiconductor (M-R-S) model implemented in TCAD

Alnassar, M, Luong, S, Tran, H, Partridge, J and Holland, A 2018, 'Simulation of graphitic contacts to p-type Si using a metal-resistor-semiconductor (M-R-S) model implemented in TCAD', International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 31, no. 3, pp. 1-7.


Document type: Journal Article
Collection: Journal Articles

Title Simulation of graphitic contacts to p-type Si using a metal-resistor-semiconductor (M-R-S) model implemented in TCAD
Author(s) Alnassar, M
Luong, S
Tran, H
Partridge, J
Holland, A
Year 2018
Journal name International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume number 31
Issue number 3
Start page 1
End page 7
Total pages 7
Publisher John Wiley and Sons
Abstract In this paper, we describe simulations of highly rectifying carbon/p-Si junctions using Sentaurus TCAD from Synopsys. 2-D and 3-D models were constructed and optimized to fit I-V characteristics measured from these junctions. The TCAD models included a resistive interface layer, previously observed experimentally. From the model, the interface resistance was determined to be 0.04 ?·cm2, and the work function of the graphitic contacts was determined to be 4.43 eV. The latter is the work function at the interface, which cannot be measured experimentally. Schottky barrier lowering was implemented in the model to provide agreement with the measurements. The modeling provided information that could not be obtained from measurements and suggested a path to improved devices.
Subject Microelectronics and Integrated Circuits
Keyword(s) carbon
modeling
Schottky diode
silicon
TCAD
DOI - identifier 10.1002/jnm.2302
Copyright notice Copyright © 2017 John Wiley & Sons, Ltd.
ISSN 0894-3370
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