Non-volatile and volatile memory behaviour in oxygenated amorphous carbon electrochemical metallisation devices

Murdoch, B, Raeber, T, Barlow, A, McCulloch, D and Partridge, J 2018, 'Non-volatile and volatile memory behaviour in oxygenated amorphous carbon electrochemical metallisation devices', Applied Physics Letters, vol. 112, no. 24, pp. 1-5.


Document type: Journal Article
Collection: Journal Articles

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Title Non-volatile and volatile memory behaviour in oxygenated amorphous carbon electrochemical metallisation devices
Author(s) Murdoch, B
Raeber, T
Barlow, A
McCulloch, D
Partridge, J
Year 2018
Journal name Applied Physics Letters
Volume number 112
Issue number 24
Start page 1
End page 5
Total pages 5
Publisher American Institute of Physics
Abstract The resistive switching behaviour of oxygenated amorphous carbon electrochemical metallisation devices is investigated. The effect of temperature on the microstructure and composition of the oxygenated carbon matrix is also investigated by annealing in situ in a transmission electron microscope. The devices exhibit controllable bipolar non-volatile and bi-directional volatile resistive switching behaviour that is dependent on the resistance state of the device and the polarity of the RESET voltage. The characteristics presented suggest suitability for incorporation into neuromorphic computing and memory storage technologies as memory cells, selector devices, or synaptic emulators.
Subject Nanoelectronics
DOI - identifier 10.1063/1.5029402
Copyright notice © 2018 Author(s).
ISSN 0003-6951
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