Oxygen-deficient strontium titanate based stretchable resistive memories

Rahman, M, Ahmed, T, Walia, S, Sriram, S and Bhaskaran, M 2018, 'Oxygen-deficient strontium titanate based stretchable resistive memories', Applied Materials Today, vol. 13, pp. 126-134.

Document type: Journal Article
Collection: Journal Articles

Title Oxygen-deficient strontium titanate based stretchable resistive memories
Author(s) Rahman, M
Ahmed, T
Walia, S
Sriram, S
Bhaskaran, M
Year 2018
Journal name Applied Materials Today
Volume number 13
Start page 126
End page 134
Total pages 9
Publisher Elsevier
Abstract A stretchable non-volatile resistive memory is a fundamental element in realizing complex neuromor-phic computing and compact logic application adaptable to wearable electronics. A room temperaturedeposited SrTiO3-x(STO) based resistive memory on stretchable polydimethylsiloxane (PDMS) substratehas been developed. The STO-based resistive memory does not require energy-intensive electroforming,exhibits stable complementary switching, long retention time, and reproducible endurance switching.The devices demonstrate the ability to operate under uniaxial tensile strain and extreme bending con-ditions. This work is an important step realizing metal oxide based stretchable non-volatile memories,critical to integrated devices for skin-mounted electronics.
Subject Electrical and Electronic Engineering not elsewhere classified
Functional Materials
Keyword(s) Stretchablity
Resistive memory
Complementary switching
Tensile strain
DOI - identifier 10.1016/j.apmt.2018.08.011
Copyright notice © 2018 Elsevier Ltd. All rights reserved.
ISSN 2352-9407
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Citation counts: TR Web of Science Citation Count  Cited 2 times in Thomson Reuters Web of Science Article | Citations
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