Reversible resistive switching behaviour in CVD grown, large area MoOx

Rahman, F, Ahmed, T, Walia, S, Mayes, E, Sriram, S, Bhaskaran, M and Balendhran, S 2018, 'Reversible resistive switching behaviour in CVD grown, large area MoOx', Nanoscale, vol. 10, no. 42, pp. 19711-19719.

Document type: Journal Article
Collection: Journal Articles

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Title Reversible resistive switching behaviour in CVD grown, large area MoOx
Author(s) Rahman, F
Ahmed, T
Walia, S
Mayes, E
Sriram, S
Bhaskaran, M
Balendhran, S
Year 2018
Journal name Nanoscale
Volume number 10
Issue number 42
Start page 19711
End page 19719
Total pages 9
Publisher Royal Society of Chemistry
Abstract Non-volatile resistive memory devices are theorized to be the most promising pathway towards analog memory and neuromorphic computing. Two-dimensional MoO3 is a versatile planar transition metal oxide, whose properties can be readily tuned, making it anywhere from a wide bandgap semiconductor to a semi-metal. Successful integration of such a planar metal oxide into resistive memory can enable adaptive and low power memory applications. Here, we investigate the non-volatile and reversible resistive switching behaviour of oxygen deficient MoOx in a cross-point metal/insulator/metal (MIM) architecture. Layered MoOx films are synthesised using chemical vapour deposition (CVD) and reveal excellent resistive switching performance with relatively low electroforming and operating voltages. Switching ratios of ∼103 and stable data retention of >104 s are achieved. As such, this work demonstrates the viability of MoOx as a resistive memory element and paves the way for future two-dimensional resistive memory technologies.
Subject Nanoelectronics
Keyword(s) molybdenum oxide
DOI - identifier 10.1039/C8NR04407D
Copyright notice © 2018 The Royal Society of Chemistry
ISSN 2040-3364
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