Two-dimensional MoO3 via a top-down chemical thinning route

Rahman, F, Ahmed, T, Walia, S, Mayes, E, Sriram, S, Bhaskaran, M and Balendhran, S 2017, 'Two-dimensional MoO3 via a top-down chemical thinning route', 2D Materials, vol. 4, no. 3, pp. 1-13.

Document type: Journal Article
Collection: Journal Articles

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Title Two-dimensional MoO3 via a top-down chemical thinning route
Author(s) Rahman, F
Ahmed, T
Walia, S
Mayes, E
Sriram, S
Bhaskaran, M
Balendhran, S
Year 2017
Journal name 2D Materials
Volume number 4
Issue number 3
Start page 1
End page 13
Total pages 13
Publisher Institute of Physics Publishing
Abstract Two-dimensional MoO3 is a versatile planar material, whose properties can be readily tuned, rendering it anywhere from a wide bandgap semiconductor to semi-metallic. This makes it a desirable candidate for a wide range of applications. However, to utilise its full potential, a repeatable process to produce high-quality two-dimensional (2D) crystals is yet to be reported. Here, we report a wet chemical etching process to controllably thin down bulk crystals of MoO3. This process does not result in any structural or compositional changes, while retaining the desirable intrinsic electronic properties of the material. Field effect transistors based on post-etched crystals exhibit switching ratios of over three orders of magnitude. As such, the proposed thinning process opens pathways to exploit the exotic properties of planar MoO3 to create versatile 2D systems.
Subject Functional Materials
Keyword(s) MoO3
two-dimensional metal oxide
2D electronics
DOI - identifier 10.1088/2053-1583/aa79d5
Copyright notice © 2017 IOP Publishing Ltd
ISSN 2053-1583
Additional Notes This is the Accepted Manuscript version of an article accepted for publication in 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at
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