Encapsulation-Free Stabilization of Few-Layer Black Phosphorus

Elbadawi, C, Queralt, R, Xu, Z, Bishop, J, Ahmed, T, Kuriakose, S, Walia, S, Toth, M, Aharonovich, I and Lobo, C 2018, 'Encapsulation-Free Stabilization of Few-Layer Black Phosphorus', ACS Applied Materials and Interfaces, vol. 10, no. 29, pp. 24327-24331.

Document type: Journal Article
Collection: Journal Articles

Title Encapsulation-Free Stabilization of Few-Layer Black Phosphorus
Author(s) Elbadawi, C
Queralt, R
Xu, Z
Bishop, J
Ahmed, T
Kuriakose, S
Walia, S
Toth, M
Aharonovich, I
Lobo, C
Year 2018
Journal name ACS Applied Materials and Interfaces
Volume number 10
Issue number 29
Start page 24327
End page 24331
Total pages 5
Publisher American Chemical Society
Abstract Under ambient conditions and in H2O and O2 environments, reactive oxygen species (ROS) cause immediate degradation of the mobility of few-layer black phosphorus (FLBP). Here, we show that FLBP degradation can be prevented by maintaining the temperature in the range ~125-300 °C during ROS exposure. FLBP devices maintained at elevated temperature show no deterioration of electrical conductance, in contrast to the immediate degradation of pristine FLBP held at room temperature. Our results constitute the first demonstration of stable FLBP in the presence of ROS without requiring encapsulation or a protective coating. The stabilization method will enable applications based on the surface properties of intrinsic FLBP.
Subject Elemental Semiconductors
Functional Materials
Keyword(s) black phosphorus
environmental scanning electron microscopy
reactive oxygen species
DOI - identifier 10.1021/acsami.8b04180
Copyright notice © 2018 American Chemical Society.
ISSN 1944-8244
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