Metal-Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics

Nirantar, S, Ahmed, T, Ren, G, Gutruf, P, Xu, C, Bhaskaran, M, Walia, S and Sriram, S 2018, 'Metal-Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics', Nano Letters, vol. 18, no. 12, pp. 7478-7484.


Document type: Journal Article
Collection: Journal Articles

Title Metal-Air Transistors: Semiconductor-Free Field-Emission Air-Channel Nanoelectronics
Author(s) Nirantar, S
Ahmed, T
Ren, G
Gutruf, P
Xu, C
Bhaskaran, M
Walia, S
Sriram, S
Year 2018
Journal name Nano Letters
Volume number 18
Issue number 12
Start page 7478
End page 7484
Total pages 7
Publisher American Chemical Society
Abstract Scattering-free transport in vacuum tubes has always been superior to solid-state transistors. It is the advanced fabrication with mass production capability at low cost which drove solid-state nanoelectronics. Here, we combine the best of vacuum tubes with advanced nanofabrication technology. We present nanoscale, metal-based, field emission air channel transistors. Comparative analysis of tungsten-, gold-, and platinum-based devices is presented. Devices are fabricated with electron beam lithography, achieving channel lengths less than 35 nm. With this small channel length, vacuum-like carrier transport is possible in air under room temperature and pressure. Source and drain electrodes have planar, symmetric, and sharp geometry. Because of this, devices operate in bidirection with voltages <2 V and current values in few tens of nanoamperes range. The experimental data shows that influential operation mechanism is Fowler-Nordheim tunnelling in tungsten and gold devices, while Schottky emission in platinum device. The presented work enables a technology where metal-based switchable nanoelectronics can be created on any dielectric surface with low energy requirements.
Subject Nanoelectronics
Keyword(s) Air-channel transistor
field emission
metal transistors
semiconductor-free nanoelectronics
DOI - identifier 10.1021/acs.nanolett.8b02849
Copyright notice © 2018 American Chemical Society.
ISSN 1530-6984
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