Wafer-Sized Ultrathin Gallium and Indium Nitride Nanosheets through the Ammonolysis of Liquid Metal Derived Oxides

Syed, N, Zavabeti, A, Messalea, K, Gaspera, E, Elbourne, A, Jannat, A, Mohiuddin, M, Zheng, G, Zhang, B, Wang, L, Russo, S, Esrafilzadeh, D, McConville, C, Kalantar-Zadeh, K and Daeneke, T 2019, 'Wafer-Sized Ultrathin Gallium and Indium Nitride Nanosheets through the Ammonolysis of Liquid Metal Derived Oxides', Journal of the American Chemical Society, vol. 141, no. 1, pp. 104-108.


Document type: Journal Article
Collection: Journal Articles

Title Wafer-Sized Ultrathin Gallium and Indium Nitride Nanosheets through the Ammonolysis of Liquid Metal Derived Oxides
Author(s) Syed, N
Zavabeti, A
Messalea, K
Gaspera, E
Elbourne, A
Jannat, A
Mohiuddin, M
Zheng, G
Zhang, B
Wang, L
Russo, S
Esrafilzadeh, D
McConville, C
Kalantar-Zadeh, K
Daeneke, T
Year 2019
Journal name Journal of the American Chemical Society
Volume number 141
Issue number 1
Start page 104
End page 108
Total pages 5
Publisher American Chemical Society
Abstract We report the synthesis of centimeter sized ultrathin GaN and InN. The synthesis relies on the ammonolysis of liquid metal derived two-dimensional (2D) oxide sheets that were squeeze-transferred onto desired substrates. Wurtzite GaN nanosheets featured typical thicknesses of 1.3 nm, an optical bandgap of 3.5 eV and a carrier mobility of 21.5 cm2 V-1 s-1, while the InN featured a thickness of 2.0 nm. The deposited nanosheets were highly crystalline, grew along the (001) direction and featured a thickness of only three unit cells. The method provides a scalable approach for the integration of 2D morphologies of industrially important semiconductors into emerging electronics and optical devices.
Subject Functional Materials
DOI - identifier 10.1021/jacs.8b11483
Copyright notice © 2018 American Chemical Society.
ISSN 0002-7863
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