Temperature dependent electrical characteristics of rectifying graphitic contacts to p-type silicon

Pham, H, Le, P, Tran, H, Raeber, T, Alnassar, M, Holland, A and Partridge, J 2018, 'Temperature dependent electrical characteristics of rectifying graphitic contacts to p-type silicon', Semiconductor Science and Technology, vol. 34, no. 1, 015003, pp. 1-5.


Document type: Journal Article
Collection: Journal Articles

Title Temperature dependent electrical characteristics of rectifying graphitic contacts to p-type silicon
Author(s) Pham, H
Le, P
Tran, H
Raeber, T
Alnassar, M
Holland, A
Partridge, J
Year 2018
Journal name Semiconductor Science and Technology
Volume number 34
Issue number 1
Article Number 015003
Start page 1
End page 5
Total pages 5
Publisher Institute of Physics Publishing Ltd.
Abstract Graphitic contacts to semiconductors have been shown to provide highly rectifying current-voltage characteristics coupled with high thermal/chemical stability. Energetically deposited graphitic contacts to p-type Si have exhibited rectification ratios (at ± 1.0 V) up to 106:1 and ideality factors approaching unity. Here, we report temperature dependent current-voltage (I-V-T) measurements performed on such devices. The measurements and subsequent analysis show that during energetic carbon deposition, deleterious oxide/contaminants are removed from the Si substrate surface. The Richardson constant of the p-type Si extracted from the I-V-T measurements agrees with the theoretical value, indicating that the surface contaminants are removed without significant damage to the underlying Si. Therefore, by energetic deposition of C on Si, C-Si junctions can be formed with low lateral inhomogeneity and low interface defect density. These attributes of the junctions enable the observed near-ideal Schottky diode characteristics.
Subject Microelectronics and Integrated Circuits
Keyword(s) Graphenic carbon
Graphitic carbon
Electronic materials
Schottky contacts
DOI - identifier 10.1088/1361-6641
Copyright notice © 2018 IOP Publishing
ISSN 1361-6641
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