Sensory gating in bilayer amorphous carbon memristors

Raeber, T, Barlow, A, Zhao, Z, McKenzie, D, Partridge, J, McCulloch, D and Murdoch, B 2018, 'Sensory gating in bilayer amorphous carbon memristors', Nanoscale, vol. 10, no. 43, pp. 20272-20278.

Document type: Journal Article
Collection: Journal Articles

Title Sensory gating in bilayer amorphous carbon memristors
Author(s) Raeber, T
Barlow, A
Zhao, Z
McKenzie, D
Partridge, J
McCulloch, D
Murdoch, B
Year 2018
Journal name Nanoscale
Volume number 10
Issue number 43
Start page 20272
End page 20278
Total pages 7
Publisher Royal Society of Chemistry
Abstract Multi-state amorphous carbon-based memory devices have been developed that exhibit both bipolar and unipolar resistive switching behaviour. These modes of operation were implemented independently to access multiple resistance states, enabling higher memory density than conventional binary non-volatile memory technologies. The switching characteristics have been further utilised to study synaptic computational functions that could be implemented in artificial neural networks. Notably, paired-pulse inhibition (PPI) is observed at bio-realistic timescales (<100 ms). Devices displaying this rich synaptic behaviour could function as robust stand-alone synapse-inspired memory or be applied as filters for specialised neuromorphic circuits and sensors.
Subject Electronic and Magnetic Properties of Condensed Matter; Superconductivity
DOI - identifier 10.1039/c8nr05328f
Copyright notice © 2018 The Royal Society of Chemistry
ISSN 2040-3364
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