Impact of Temperature on Electrical Performance of Ni film on n-type 4H-SiC Contacts in Terms of Micropipes Density

Pham, H, Luong, S, Holland, A and Nguyen, H 2018, 'Impact of Temperature on Electrical Performance of Ni film on n-type 4H-SiC Contacts in Terms of Micropipes Density', in 2018 2nd International Conference on Recent Advances in Signal Processing, Telecommunications & Computing (SigTelCom), Ho Chi Minh, Vietnam, 29 Jan 2018, pp. 132-135.


Document type: Conference Paper
Collection: Conference Papers

Title Impact of Temperature on Electrical Performance of Ni film on n-type 4H-SiC Contacts in Terms of Micropipes Density
Author(s) Pham, H
Luong, S
Holland, A
Nguyen, H
Year 2018
Conference name 2nd International Conference on Recent Advances in Signal Processing, Telecommunications and Computing, SIGTELCOM 2018
Conference location Ho Chi Minh, Vietnam
Conference dates 29 Jan 2018
Proceedings title 2018 2nd International Conference on Recent Advances in Signal Processing, Telecommunications & Computing (SigTelCom)
Publisher IEEE
Place of publication Ho Chi Minh, Vietnam
Start page 132
End page 135
Total pages 4
Abstract Silicon carbide (SiC) is novel semiconductor material which is intensively studied recently due to its outstanding physical and electrical characteristics. One of the drawbacks of this innovative SiC material is the micropipe defect, which is created during SiC crystal growth. These defects worsen the performance of the semiconductor devices by increasing leakage current and decreasing breakdown voltage. As heat treatment is a necessary process in making Ohmic contact, it is interesting to examine the correlation between defects density and heating temperature. Nickel (Ni) films are deposited on n-type 4H-SÌC substrate to test for this correlation. Temperature up to 1000°C is used for heat treatment While it is still possible to form Ohmic contact with high-micropipe density samples (-100 micropipe per cm2), the impact of temperature on low-micropipe density samples (< 30 micropipe per cm2) is minor.
Subjects Microelectronics and Integrated Circuits
Keyword(s) current-voltage characteristics
micropipe
silicon carbide
4H-SiC
heat treatment
DOI - identifier 10.1109/SIGTELCOM.2018.8325777
Copyright notice © 2018 IEEE
ISBN 9781538629765
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