Wide band gap and conducting tungsten carbide (WC) thin films prepared by hot wire chemical vapor deposition (HW-CVD) method

Pawbake, A, Waykar, R, Jadhavar, A, Kulkarni, R, Waman, V, Date, A, Late, D, Pathan, H and Jadkar, S 2016, 'Wide band gap and conducting tungsten carbide (WC) thin films prepared by hot wire chemical vapor deposition (HW-CVD) method', Materials Letters, vol. 183, pp. 315-317.


Document type: Journal Article
Collection: Journal Articles

Title Wide band gap and conducting tungsten carbide (WC) thin films prepared by hot wire chemical vapor deposition (HW-CVD) method
Author(s) Pawbake, A
Waykar, R
Jadhavar, A
Kulkarni, R
Waman, V
Date, A
Late, D
Pathan, H
Jadkar, S
Year 2016
Journal name Materials Letters
Volume number 183
Start page 315
End page 317
Total pages 3
Publisher Elsevier
Abstract In this letter, we report synthesis of tungsten carbide (WC) thin films having wide band gap(3.22-3.3 eV) with high electrical conductivity (80-1260 S/cm) by HW-CVD using heated using heated W filament and Tetra-fluoro-methane (CF4) gas. Formation of WC was confirmed by low angle XRD, Raman spectroscopy and x-ray photoelectron spectroscopy. UV-Visible spectroscopy analysis revealed that the synthesized films have high transmission at wavelength 500 nm. Electrical properties measured using Hall measurement show that these films are semiconductor. The obtained results imply that the growth of WC thin films is mainly from the atomic species(W and C) evaporated from the hot filament. The HW-CVD opens a novel route to synthesize wide band gap and conducting WC at a cost-efficient way for DSSCs and hydrogen evolution reaction (HER).
Subject Chemical Engineering not elsewhere classified
Keyword(s) Raman
Semiconductors
Thin films
DOI - identifier 10.1016/j.matlet.2016.07.132
Copyright notice © 2016 Elsevier
ISSN 0167-577X
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