Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)1(Bi4Ti3O12)2 ceramics

Zhang, F, Wahyudi, O, Liu, Z, Gu, H and Li, Y 2018, 'Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)1(Bi4Ti3O12)2 ceramics', Journal of Alloys and Compounds, vol. 753, pp. 54-59.


Document type: Journal Article
Collection: Journal Articles

Title Preparation and electrical properties of a new-type intergrowth bismuth layer-structured (Bi3TiNbO9)1(Bi4Ti3O12)2 ceramics
Author(s) Zhang, F
Wahyudi, O
Liu, Z
Gu, H
Li, Y
Year 2018
Journal name Journal of Alloys and Compounds
Volume number 753
Start page 54
End page 59
Total pages 6
Publisher Elsevier
Abstract We firstly report an abnormal intergrowth bismuth layer-structured phase, (Bi3TiNbO9)1(Bi4Ti3O12)2, or BTN1BiT2, with non-equal parent blocks. The HRTEM analysis shows that such compound has a long-range-ordered -233- sequence. The crystal structure has been solved in orthorhombic space group A21am with a = 5.458 Å b = 5.415 Å and c = 91.03 Å. Double dielectric peaks at 668 °C and 760 °C were observed. The thermal stable piezoelectric activity of d33 = 11.613.6 pC/N up to 600 °C suggests that the BTN1BiT2 ceramic is a good candidate for piezoelectric device using in high temperature. This work indicates the universality of such abnormal structures and it will obviously expand Aurivillius family for future applications.
Subject Materials Engineering not elsewhere classified
Condensed Matter Physics not elsewhere classified
Resources Engineering and Extractive Metallurgy not elsewhere classified
Keyword(s) Abnormal intergrowth structure
Bi3TiNbO9
Bi4Ti3O12
Bismuth-layered ferroelectrics
High temperature piezoelectrics
DOI - identifier 10.1016/j.jallcom.2018.04.134
Copyright notice © 2018 Elsevier B.V. All rights reserved
ISSN 0925-8388
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