Augmented band gap tunability in indium-doped zinc sulfide nanocrystals

Della Gaspera, E, Griggs, J, Ahmed, T, Walia, S, Mayes, E, Calzolari, A, Catellani, A and van Embden, J 2019, 'Augmented band gap tunability in indium-doped zinc sulfide nanocrystals', Nanoscale, vol. 11, no. 7, pp. 3360-3369.

Document type: Journal Article
Collection: Journal Articles

Title Augmented band gap tunability in indium-doped zinc sulfide nanocrystals
Author(s) Della Gaspera, E
Griggs, J
Ahmed, T
Walia, S
Mayes, E
Calzolari, A
Catellani, A
van Embden, J
Year 2019
Journal name Nanoscale
Volume number 11
Issue number 7
Start page 3360
End page 3369
Total pages 10
Publisher Royal Society of Chemistry
Abstract Doping semiconductor nanocrystals is a powerful tool to impart new and beneficial optical and electrical properties to the host nanocrystals. Doping has been used to improve the performances of nanocrystal-based devices in applications as diverse as optics, magnetism, electronics, catalysis and sensing. In this work we present a low temperature colloidal synthesis of zinc sulfide (ZnS) nanocrystals doped with indium. Through optimization of the reaction parameters and the doping level, quantum confined (similar to 2 nm in size) crystalline colloids with highly tunable optical properties are achieved. Using a suite of characterization techniques including X-ray diffraction, high-resolution transmission electron microscopy, optical spectroscopies (absorption, emission, and Raman), compositional analyses and first principles simulations, we investigate the structural, morphological and optical properties of the synthesized nanocrystals. Indium dopants are found to heavily influence the band gap of ZnS. This strategy in addition to traditional methods of size control enables the synthesis of nanocrystals with finely tunable band gaps between similar to 3.8 eV-4.3 eV. These doped ZnS nanocrystals are fabricated into selective UV thin-film absorbers and discriminatory proof-of-concept UVA-UVB/C photodetectors.
Subject Physical Chemistry of Materials
Colloid and Surface Chemistry
DOI - identifier 10.1039/c8nr08830f
Copyright notice © The Royal Society of Chemistry.
ISSN 2040-3364
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