Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing

Castelletto, S, Almutairi, A, Kumagai, K, Katkus, T, Hayasaki, Y, Johnson, B and Juodkazis, S 2018, 'Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing', Optics Letters, vol. 43, no. 24, pp. 6077-6080.


Document type: Journal Article
Collection: Journal Articles

Title Photoluminescence in hexagonal silicon carbide by direct femtosecond laser writing
Author(s) Castelletto, S
Almutairi, A
Kumagai, K
Katkus, T
Hayasaki, Y
Johnson, B
Juodkazis, S
Year 2018
Journal name Optics Letters
Volume number 43
Issue number 24
Start page 6077
End page 6080
Total pages 4
Publisher Optical Society of America
Abstract Direct femtosecond laser writing has been used to produce localized regions of photo-luminescent emission in 4H- and 6H-silicon carbide (SiC). Arrays of active color centers were fabricated by different pulse laser energies in the sites of square grids at various depths (from surface level to 10 mu m below surface). We optically characterized the fabricated color centers using confocal imaging with 532 and 780 nm excitation, photo-luminescence spectroscopy, and lifetime decay at room temperature. We show that the technique can produce specifically the silicon vacancy color center emitting in the range 850-950 nm and other emitters in the 700 nm. This method can be adopted to engineer color centers in (SiC) at different depths in the material for single-photon generation, sensing, display fabrication, and light emitting diodes.
Subject Nanophotonics
Photonics, Optoelectronics and Optical Communications
DOI - identifier 10.1364/OL.43.006077
Copyright notice © 2018 Optical Society of America
ISSN 0146-9592
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