Temperature-Dependent Electrical Characteristics and Extraction of Richardson Constant from Graphitic-C/n-Type 6H-SiC Schottky Diodes

Pham, H, Tran, H, Holland, A and Partridge, J 2019, 'Temperature-Dependent Electrical Characteristics and Extraction of Richardson Constant from Graphitic-C/n-Type 6H-SiC Schottky Diodes', Journal of Electronic Materials, vol. 48, no. 4, pp. 2061-2066.


Document type: Journal Article
Collection: Journal Articles

Title Temperature-Dependent Electrical Characteristics and Extraction of Richardson Constant from Graphitic-C/n-Type 6H-SiC Schottky Diodes
Author(s) Pham, H
Tran, H
Holland, A
Partridge, J
Year 2019
Journal name Journal of Electronic Materials
Volume number 48
Issue number 4
Start page 2061
End page 2066
Total pages 6
Publisher Springer
Abstract Energetically deposited graphitic carbon (C) is known to form high-endurance rectifying contacts to a variety of semiconductors. Graphitic contacts to n-type 6H-SiC have demonstrated current rectification ratios (at ± 1.5 V) up to 1:106. In this article, the current voltage temperature (I-V-T) characteristics of these devices are examined to reveal more detail on the junction/barrier properties that are critical to performance. Analysis of the I-V-T characteristics and disparity between barrier heights extracted from the I-V-T data and C-V data show inhomogeneity in the contacts and this has been quantified. Accounting for the inhomogeneity, the homogeneous Richardson constant of the n-type 6H-SiC can be extracted from the I-V-T data, and this value agrees with the reported theoretical value.
Subject Microelectronics and Integrated Circuits
Keyword(s) Graphenic carbon
graphitic carbon
electronic materials
Schottky contacts
DOI - identifier 10.1007/s11664-019-06963-8
Copyright notice © 2019 The Minerals, Metals & Materials Society
ISSN 0361-5235
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