TCAD simulation of a single Monolithic Active Pixel Sensors based on High Voltage CMOS technology

Bui, T, Reeves, G, Leech, P, Holland, A and Taylor, G 2018, 'TCAD simulation of a single Monolithic Active Pixel Sensors based on High Voltage CMOS technology', MRS Advances, vol. 3, no. 51, pp. 3053-3059.


Document type: Journal Article
Collection: Journal Articles

Title TCAD simulation of a single Monolithic Active Pixel Sensors based on High Voltage CMOS technology
Author(s) Bui, T
Reeves, G
Leech, P
Holland, A
Taylor, G
Year 2018
Journal name MRS Advances
Volume number 3
Issue number 51
Start page 3053
End page 3059
Total pages 7
Publisher Cambridge University Press
Abstract A model of a High Voltage CMOS (HV-CMOS)Monolithic Active Pixel Sensor (MAPS) has been modelled using Technology Computer Aided Design (TCAD). The model has incorporated both the active region and the on-pixel readout circuits which were comprised of a source follower amplifier and an integrated charge amplifier. The simulation has examined the electrical characteristics and response output of a HV-CMOS MAPS sensor using typical dimensions, levels of doping in the structural layers and bias conditions for this sensor. The performance of two alternate designs of amplifier have been examined as a function of the operating parameters. The response of the sensor to the incidence of Minimum Ionizing Particles (MIPs) at different energies has been included in the model.
Subject Input, Output and Data Devices
Keyword(s) sensor
stimulation
DOI - identifier 10.1557/adv.2018.417
Copyright notice © Materials Research Society 2018
ISSN 2059-8521
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