Formation of an r8-Dominant Si Material

Wong, S, Haberl, B, Johnson, B, Mujica, A, Guthrie, M, McCallum, J, Williams, J and Bradby, J 2019, 'Formation of an r8-Dominant Si Material', Physical Review Letters, vol. 122, no. 10, pp. 1-6.


Document type: Journal Article
Collection: Journal Articles

Title Formation of an r8-Dominant Si Material
Author(s) Wong, S
Haberl, B
Johnson, B
Mujica, A
Guthrie, M
McCallum, J
Williams, J
Bradby, J
Year 2019
Journal name Physical Review Letters
Volume number 122
Issue number 10
Start page 1
End page 6
Total pages 6
Publisher American Physical Society
Abstract The rhombohedral phase of Si (r8-Si), a promising semiconducting material, is formed by indentation together with the body-centered cubic phase (bc8-Si). Using a novel sample preparation method, x-ray diffraction is used to determine the relative volume of these phases in indented Si and allow observation of a distorted unit cell along the direction of indentation loading. Theoretical calculations together with these observations suggest the indent contains an intrinsic compression of ∼4 GPa that stabilizes the r8 phase.
Subject Functional Materials
Keyword(s) High-Pressure Phases
Silicon
Transformations
Indentation
Nanoindentation
Transitions
Forms
DOI - identifier 10.1103/PhysRevLett.122.105701
Copyright notice © 2019 American Physical Society
ISSN 0031-9007
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