Large-area synthesis of 2D MoO3-x for enhanced optoelectronic applications

Arash, A, Ahmed, T, Rajan, A, Walia, S, Rahman, F, Mazumder, A, Ramanathan, R, Bhaskaran, M, Mayes, E, Strano, M and Balendhran, S 2019, 'Large-area synthesis of 2D MoO3-x for enhanced optoelectronic applications', 2D Materials, vol. 6, no. 3, pp. 1-9.


Document type: Journal Article
Collection: Journal Articles

Title Large-area synthesis of 2D MoO3-x for enhanced optoelectronic applications
Author(s) Arash, A
Ahmed, T
Rajan, A
Walia, S
Rahman, F
Mazumder, A
Ramanathan, R
Bhaskaran, M
Mayes, E
Strano, M
Balendhran, S
Year 2019
Journal name 2D Materials
Volume number 6
Issue number 3
Start page 1
End page 9
Total pages 9
Publisher Institute of Physics Publishing
Abstract Two-dimensional (2D) molybdenum trioxide has been attracting research interest due to its bandgap tunability and a wide variety of desirable electronic/optoelectronic properties. However, the lack of a reproducible synthesis process for obtaining large coverage 2D MoO3 has limited the use of this material. Here we report the synthesis of large area 2D MoO3-x via physical vapor deposition, using MoO3 powder as the precursor. The as-grown layers are directly deposited on SiO2/Si, eliminating the necessity for any transfer process. These as-grown MoO3-x layers allow for the large-scale fabrication of planar device arrays. The applicability of 2D MoO3-x in optoelectronics is established via the demonstration of low-power ultraviolet (UV) sensor arrays, with rapid response times (200 µs) and responsivity up to 54.4 A centerdot W-1. At a bias voltage of 0.1 V, they are at least 400 times more power efficient than their next best contender.
Subject Sensor Technology (Chemical aspects)
Photodetectors, Optical Sensors and Solar Cells
Nanoelectronics
Keyword(s) molybdenum oxide
2D semiconductors
UV sensing
large area synthesis
vapor deposition
DOI - identifier 10.1088/2053-1583/ab1114
Copyright notice © 2019 IOP Publishing
ISSN 2053-1583
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