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Characterization of n-type and p-type semiconductor gas sensors based on NiOx doped TiO2 thin films

Wisitsoraat, A, Tuantranont, A, Comini, E, Sberveglieri, G and Wlodarski, W 2009, 'Characterization of n-type and p-type semiconductor gas sensors based on NiOx doped TiO2 thin films', Thin Solid Films, vol. 517, no. 8, pp. 2775-2780.

Document type: Journal Article
Collection: Journal Articles

Title Characterization of n-type and p-type semiconductor gas sensors based on NiOx doped TiO2 thin films
Author(s) Wisitsoraat, A
Tuantranont, A
Comini, E
Sberveglieri, G
Wlodarski, W
Year 2009
Journal name Thin Solid Films
Volume number 517
Issue number 8
Start page 2775
End page 2780
Total pages 6
Publisher Elsevier Science
Abstract This work presents the development of n-type and p-type gas-sensitive materials from NiOx doped TiO2 thin films prepared by ion-assisted electron-beam evaporation. TiO2 gas-sensing layers have been deposited over a wide range of NiOx content (0-10 wt.%). The material analysis by atomic force microscopy, X-ray photoemission spectroscopy, and X-ray diffraction suggests that NiOx doping does not significantly affect surface morphology and Ni element may be a substitutional dopant of the TiO2 host material. Electrical characterization shows that NiOx content as high as 10% wt. is needed to invert the n-type conductivity of TiO2 into p-type conductivity. There are notable gas-sensing response differences between n-type and p-type NiOx doped TiO2 thin film. The responses toward all tested reducing gases tend to increase with operating temperature for the n-type TiO2 films while the response decreases with temperature for p-type TiO2 film. In addition, the p-type NiOx doping results in the significant response enhancement toward tested reducing gases such as acetone and ethanol at low operating temperature of 300 ºC.
Subject Nanometrology
Keyword(s) Electron beam evaporation
Nickel oxide
Semiconductor gas sensor
Thin films
Titanium dioxide
X-ray diffraction
X-ray photoelectron spectroscopy
Copyright notice © 2008 Elsevier B.V. All rights reserved.
ISSN 0040-6090
 
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