Investigation of the physical origins of etching LiNbO3 during Ti in-diffusion

Sivan, V, Holland, A, O'Mullane, A and Mitchell, A 2010, 'Investigation of the physical origins of etching LiNbO3 during Ti in-diffusion', Applied Physics Letters, vol. 96, no. 12, pp. 1-3.


Document type: Journal Article
Collection: Journal Articles

Title Investigation of the physical origins of etching LiNbO3 during Ti in-diffusion
Author(s) Sivan, V
Holland, A
O'Mullane, A
Mitchell, A
Year 2010
Journal name Applied Physics Letters
Volume number 96
Issue number 12
Start page 1
End page 3
Total pages 3
Publisher American Institute of Physics
Abstract We investigate the physical origins of etching observed during Ti diffusion. The relationship between observed etch depth and water vapor content in the annealing environment is quantified. The dynamics of the etching process are also identified. It is discovered that water vapor content is essential for etching and that there is a characteristic delay before etching is observed. From these observations we can conclude that the process is electrochemical in nature with ionic defects diffusing into the Ti strip from the lithium niobate and these defects catalyzing the dissociation of water into reactive ions.
Keyword(s) annealing environment
etch depth
etching process
in-diffusion
ionic defects
lithium niobate
reactive ion
ti diffusion
water vapor contents
DOI - identifier 10.1063/1.3367742
Copyright notice © 2010 American Institute of Physics.
ISSN 0003-6951
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