Nanorod based Schottky contact gas sensors in reversed bias condition

Yu, J, Ippolito, S, Wlodarski, W, Strano, M and Kalantar Zadeh, K 2010, 'Nanorod based Schottky contact gas sensors in reversed bias condition', Nanotechnology, vol. 21, no. 26, pp. 1-9.

Document type: Journal Article
Collection: Journal Articles

Title Nanorod based Schottky contact gas sensors in reversed bias condition
Author(s) Yu, J
Ippolito, S
Wlodarski, W
Strano, M
Kalantar Zadeh, K
Year 2010
Journal name Nanotechnology
Volume number 21
Issue number 26
Start page 1
End page 9
Total pages 9
Publisher Institute of Physics Publishing Ltd.
Abstract There has been significant interest in using electronically contacted nanorod or nanotube arrays as gas sensors, whereby an adsorbate modifies either the impedance or the Fermi level of the array, enabling detection. Typically, such arrays demonstrate the I-V curves of a Schottky diode that is formed using a metal-semiconductor junction with rectifying characteristics. We show in this work that nanostructured Schottky diodes have a functionally different response, characteristic of the large electric field induced by the size scale of the array. Specifically, they are characterized by a low reverse breakdown voltage. As a result, the reverse bias current becomes a strong function of the applied voltage. In this work, for the first time, we model this unique feature by describing the enhancement effect of high aspect ratio nanostructures on the I-V characteristics of a Schottky diode. A Pt/ZnO/SiC nanostructured Schottky diode is fabricated to verify the theoretical equations presented. The gas sensing properties of the Schottky diode in reversed bias is investigated and it is shown that the theoretical calculations are in excellent agreement with measurements.
Keyword(s) applied voltages
bias conditions
enhancement effects
gas sensing properties
gas sensors
high aspect ratio nano-structures
I - V curve
IV characteristics
metal-semiconductor junctions
nanotube arrays
rectifying characteristics
reverse bias
reverse breakdown voltage
Schottky contacts
Schottky diodes
DOI - identifier 10.1088/0957-4484/21/26/265502
Copyright notice © 2010 IOP Publishing Ltd.
ISSN 0957-4484
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Citation counts: TR Web of Science Citation Count  Cited 94 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 63 times in Scopus Article | Citations
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