Selective filling and sintering of copper nanoclusters for interconnect

Tee, K, Lassesson, A, Van Lith, J, Brown, S, Partridge, J, Schulze, M and Blaikie, R 2007, 'Selective filling and sintering of copper nanoclusters for interconnect', IEEE Transactions on Nanotechnology, vol. 6, no. 5, pp. 556-560.


Document type: Journal Article
Collection: Journal Articles

Title Selective filling and sintering of copper nanoclusters for interconnect
Author(s) Tee, K
Lassesson, A
Van Lith, J
Brown, S
Partridge, J
Schulze, M
Blaikie, R
Year 2007
Journal name IEEE Transactions on Nanotechnology
Volume number 6
Issue number 5
Start page 556
End page 560
Total pages 5
Publisher Institute of Electrical and Electronics Engineers
Abstract In copper interconnect technology, dielectric trenches are patterned, filled with copper, and polished. We report a cluster-based deposition technology that provides efficient trench filling and excellent selectivity between trenches and plateaus on damascene structures. The selectivity arises due to the propensity for reflection of clusters from the planar surfaces between trenches. Trenches of sub-200 nm widths, with various diffusion barriers and seed layers, and up to 5:1 aspect ratios have been completely filled with copper clusters. We also show that copper clusters can be sintered into a seed layer using hydrogen annealing. Thus, dense copper films within trenches are obtained. Preliminary results from planar samples show that the resistivity is around 2.3 × 10-8 (omega)m
Subject Electrical and Electronic Engineering not elsewhere classified
Keyword(s) Cluster deposition
Copper
Damascene trench filling
Integrated circuit interconnections
Integrated circuit metallization
Materials science and technology
DOI - identifier 10.1109/TNANO.2007.902643
Copyright notice © 2007 IEEE
ISSN 1536-125X
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