Scanning transmission ion microscopy of nanoscale apertures

Alves, A, VanDonkelaar, J, Rubinov, S, Reichart, P, Jamieson, D, Taylor, M, Franich, R and Johnston, P 2008, 'Scanning transmission ion microscopy of nanoscale apertures', Journal of the Korean Physical Society, vol. 53, no. 6, pp. 3704-3708.

Document type: Journal Article
Collection: Journal Articles

Title Scanning transmission ion microscopy of nanoscale apertures
Author(s) Alves, A
VanDonkelaar, J
Rubinov, S
Reichart, P
Jamieson, D
Taylor, M
Franich, R
Johnston, P
Year 2008
Journal name Journal of the Korean Physical Society
Volume number 53
Issue number 6
Start page 3704
End page 3708
Total pages 5
Publisher Korean Physical Society
Abstract Ion-beam lithography (IBL) with MeV ions at the nanometer scale can be achieved using ion masking with a nanoscale aperture. In this work, nanoscale apertures are produced using focused-ion-beam (FIB) nulling of Si cantilevers, and mask location is defined using a piezoelectrically-driven scanning stage. Experimental verification of the simulations used to model ion-aperture scattering is required. Scanning transmission ion microscopy (STIM) imaging of the apertures mounted above an active detector substrate has been conducted. The analysis of the STIM images that result from thousands of ions is complicated by the presence of stray ions scattered from upstream beam components which hit the detector substrate outside the area under investigation. A reduction in the fraction of stray ions has been achieved using extra masking of the detector substrate and by use of a slotted aperture. The slotted aperture allows investigation of the tilt alignment in only one dimension at a time whilst providing a large aperture area so that good statistics in the energy spectra of transmitted ions may be acquired. Further, the damage rate of the detector has been determined, and it was found that the ion transmission energy spectrum may be acquired without any significant influence from detector damage, provided the number of counts is below 10 4 ions.
Subject Synchrotrons; Accelerators; Instruments and Techniques
Keyword(s) nanostencil
nano-device fabrication
ion-beam lithography
ISSN 0374-4884
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Citation counts: Scopus Citation Count Cited 3 times in Scopus Article | Citations
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