Effect of the chemical vapor deposition environment on the faceted surface of alpha-(0001) sapphire

Saw, K and Du Plessis, J 2004, 'Effect of the chemical vapor deposition environment on the faceted surface of alpha-(0001) sapphire', Surface Science, vol. 565, no. 23, pp. 251-258.


Document type: Journal Article
Collection: Journal Articles

Title Effect of the chemical vapor deposition environment on the faceted surface of alpha-(0001) sapphire
Author(s) Saw, K
Du Plessis, J
Year 2004
Journal name Surface Science
Volume number 565
Issue number 23
Start page 251
End page 258
Total pages 8
Publisher Elsevier BV
Abstract The terrace-and-step structure on the alpha-(0001) sapphire surface induced by annealing has been known to be stable unlike the 7×7 reconstructed surface of silicon. However, the behavior of the terrace-and-step structure in an actual growth environment is relatively unknown. This article investigates the effect of the H2-CH4 chemical vapor deposition environment on the faceted surface of alpha-(0001) sapphire using atomic force microscopy, Auger electron spectroscopy, X-ray photoelectron spectroscopy and Raman spectroscopy.
Subject Surfaces and Structural Properties of Condensed Matter
DOI - identifier 10.1016/j.susc.2004.07.016
ISSN 0039-6028
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