Templated cluster assembly for production of metallic nanowires in passivated silicon V-grooves

Partridge, J, Brown, S, Siegert, C, Dunbar, A, Nielson, R, Kaufmann, M and Blaikie, R 2004, 'Templated cluster assembly for production of metallic nanowires in passivated silicon V-grooves', Microelectronic Engineering, vol. 7374, pp. 583-587.


Document type: Journal Article
Collection: Journal Articles

Title Templated cluster assembly for production of metallic nanowires in passivated silicon V-grooves
Author(s) Partridge, J
Brown, S
Siegert, C
Dunbar, A
Nielson, R
Kaufmann, M
Blaikie, R
Year 2004
Journal name Microelectronic Engineering
Volume number 7374
Start page 583
End page 587
Total pages 5
Publisher Elsevier BV
Abstract Wires with meso-scale and nano-scale widths have been fabricated using a novel templated cluster assembly technique. Soft-landed Sb clusters are assembled into wires at the apexes of V-grooves (widths 2-7 μm) formed in Si substrates using anisotropic KOH etching. Two methods for forming nano-wires using templated cluster assembly have been demonstrated. Depending on the chosen method of wire formation, the Si V-grooved substrates are either thermally passivated with SiO2, or passivated with SiO2 and then coated with evaporated Ti/Au. On passivated substrates, the metallic wires are formed directly by aggregation of the Sb clusters. On metallised substrates, Ar-plasma etching was used to remove the Ti/Au film around the Sb cluster wires to produce nano-scale width (~100 nm) Ti/Au wires. Following a selective wet chemical etch, Energy Dispersive X-ray analysis confirmed the complete removal of the Sb cluster assembled mask from the substrate, and the presence of Au wires within the passivated V-grooves.
Subject Surfaces and Structural Properties of Condensed Matter
DOI - identifier 10.1016/j.mee.2004.02.089
ISSN 0167-9317
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