Diamond growth on faceted sapphire and the charged cluster model

Saw, K and Du Plessis, J 2005, 'Diamond growth on faceted sapphire and the charged cluster model', Journal of Crystal Growth, vol. 279, no. 39906, pp. 349-356.

Document type: Journal Article
Collection: Journal Articles

Title Diamond growth on faceted sapphire and the charged cluster model
Author(s) Saw, K
Du Plessis, J
Year 2005
Journal name Journal of Crystal Growth
Volume number 279
Issue number 39906
Start page 349
End page 356
Total pages 8
Publisher Elsevier BV
Abstract Recently, the charged cluster model (CCM) was proposed as the nucleation and growth mechanism for low-pressure diamond, where the electric charges produced by gas activation are the nucleation sites for the supersaturated species in the gas phase. In this work, diamond is deposited using the hot filament chemical vapour technique on faceted a-(0 0 0 1) sapphire substrates. The unique combination of surface properties of sapphire such as the stable surface steps and the low charge transfer rate provides an excellent opportunity to investigate the formation of diamond within the framework of the CCM.
Subject Colloid and Surface Chemistry
Keyword(s) A1. Characterization
A1. Growth models
A1. Interfaces
A1. Nucleation
A1. Substrates
A3. Chemical vapour deposition processes
DOI - identifier 10.1016/j.jcrysgro.2005.02.072
Copyright notice © 2005 Elsevier B.V. All rights reserved.
ISSN 0022-0248
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Citation counts: TR Web of Science Citation Count  Cited 6 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 5 times in Scopus Article | Citations
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