A SOI EEPROM Based Configuration Cell with Simple Scrubbing Detection

Haque, K and Beckett, P 2011, 'A SOI EEPROM Based Configuration Cell with Simple Scrubbing Detection', in Kamakoti Veezhinathan, N. Venkateswaran (ed.) Proc 24th International Conference on VLSI Design, Chennai, India, 5th-7th Jan 2011, pp. 24-29.


Document type: Conference Paper
Collection: Conference Papers

Title A SOI EEPROM Based Configuration Cell with Simple Scrubbing Detection
Author(s) Haque, K
Beckett, P
Year 2011
Conference name 24th International Conference on VLSI Design
Conference location Chennai, India
Conference dates 5th-7th Jan 2011
Proceedings title Proc 24th International Conference on VLSI Design
Editor(s) Kamakoti Veezhinathan, N. Venkateswaran
Publisher IEEE
Place of publication Chennai, India
Start page 24
End page 29
Total pages 6
Abstract We present a Silicon-on-Insulator based circuit for use as configuration storage in a radiation hard reconfigurable system. A non-volatile storage cell, manufacturable in a standard single polysilicon SOI CMOS process with no special layers, is combined with a Schmitt sense amplifier such that the overall block exhibits two unique characteristics that enhance its resistance to radiation induced upsets. Firstly, it is impossible for a radiation-induced event to permanently flip the configuration state. Secondly, a partial de-programming resulting in a reduction in the magnitude of the storage cell voltage causes a large change in static current that can be very easily detected using a conventional sense amplifier. A memory correction (scrubbing) system that exploits this behavior is briefly described.
Subjects Microelectronics and Integrated Circuits
Industrial Electronics
Keyword(s) SOI
Radiation hard
FPGA memory
Scrubbing
DOI - identifier 10.1109/VLSID.2011.50
Copyright notice © 2011 IEEE
ISBN 9780769543482
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