A Hydrogen Gas Sensor Based on Pt/Nanostructured WO3/SiC Schottky Diode

Shafiei, M, Sadek, A, Yu, J, Latham, K, Breedon, M, McCulloch, D, Kalantar Zadeh, K and Wlodarski, W 2011, 'A Hydrogen Gas Sensor Based on Pt/Nanostructured WO3/SiC Schottky Diode', Sensor Letters, vol. 9, no. 1, pp. 11-15.


Document type: Journal Article
Collection: Journal Articles

Title A Hydrogen Gas Sensor Based on Pt/Nanostructured WO3/SiC Schottky Diode
Author(s) Shafiei, M
Sadek, A
Yu, J
Latham, K
Breedon, M
McCulloch, D
Kalantar Zadeh, K
Wlodarski, W
Year 2011
Journal name Sensor Letters
Volume number 9
Issue number 1
Start page 11
End page 15
Total pages 5
Publisher American Scientific Publishers
Abstract Pt/nanostructured WO3/SiC Schottky diodes were fabricated and applied for hydrogen gas sensing applications. The nanostructured WO3 films were synthesized from tungsten coated SiC substrates via an acid-etching method using a 1.5 M HNO3 solution for 1hr, 2hrs and 3hrs duration. Scanning electron microscopy of the developed films revealed platelet crystals with thicknesses in the order of 2Q-60 nm and lengths between 10Q-700 nm. X-ray diffraction analysis revealed that the rate of oxidation of tungsten increases as the duration of acid-etching increases. The devices were tested towards hydrogen gas balanced in air at different temperatures from 25c to 200c. At 200c, voltage shifts of 0.45 V, 0.93 V and 2.37 V were recorded for devices acid-etched for 1 hr, 2 hrs and 3 hrs duration, respectively upon exposure to 1% hydrogen, under a constant forward bias current of 500 nA.
Subject Analytical Chemistry not elsewhere classified
Nanotechnology not elsewhere classified
Keyword(s) Nanostructured WO3
Gas Sensors
Schottky Diode
Hydrogen
Acid-Etching.
DOI - identifier 10.1166/sl.2011.1409
Copyright notice © 2011 American Scientific Publishers
ISSN 1546-198X
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