A novel low-power full-adder cell with new technique in designing logical gates based on static CMOS inverter

Navi, K, Foroutan, V, Rahimi Azghadi, M, Maeen, M, Ebrahimpour, M, Kaveh, M and Kavehei, O 2009, 'A novel low-power full-adder cell with new technique in designing logical gates based on static CMOS inverter', Microelectronics Journal, vol. 40, no. 10, pp. 1441-1448.


Document type: Journal Article
Collection: Journal Articles

Title A novel low-power full-adder cell with new technique in designing logical gates based on static CMOS inverter
Author(s) Navi, K
Foroutan, V
Rahimi Azghadi, M
Maeen, M
Ebrahimpour, M
Kaveh, M
Kavehei, O
Year 2009
Journal name Microelectronics Journal
Volume number 40
Issue number 10
Start page 1441
End page 1448
Total pages 8
Publisher Elsevier
Abstract A new low-power full-adder based on CMOS inverter is presented. This full-adder is comprised of inverters. Universal gates such as NOR, NAND and MAJORITY-NOT gates are implemented with a set of inverters and non-conventional implementation of them. In the proposed design approach the time consuming XOR gates are eliminated. As full-adders are frequently employed in a tree-structured configuration for high-performance arithmetic circuits, a cascaded simulation structure is employed to evaluate the full-adders in a realistic application environment. The circuits being studied were optimized for energy efficiency using 0.18 mm and 90 nm CMOS process technologies. The proposed fulladder shows full swing logic, balanced outputs and strong output drivability. It is also observed that the presented design can be utilized in many cases especially whenever the lowest possible power consumption is targeted. Circuits layout implementations and checking their functionality have been done using Cadence IC package and Synopsys HSpice, respectively.
Keyword(s) Low-power Full-adder
Low-power CMOS design
Inverter-based full-adder design
Transmission gate
DOI - identifier 10.1016/j.mejo.2009.06.005
Copyright notice © 2009 Elsevier Ltd. All rights reserved.
ISSN 0959-8324
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