Annealing induced anomalous electrical transport behavior in SnO 2 thin films prepared by pulsed laser deposition

Ke, C, Yang, Z, Pan, J, Zhu, W and Wang, L 2010, 'Annealing induced anomalous electrical transport behavior in SnO 2 thin films prepared by pulsed laser deposition', Applied Physics Letters, vol. 97, no. 9, 092101, pp. 1-3.


Document type: Journal Article
Collection: Journal Articles

Title Annealing induced anomalous electrical transport behavior in SnO 2 thin films prepared by pulsed laser deposition
Author(s) Ke, C
Yang, Z
Pan, J
Zhu, W
Wang, L
Year 2010
Journal name Applied Physics Letters
Volume number 97
Issue number 9
Article Number 092101
Start page 1
End page 3
Total pages 3
Publisher American Institute of Physics
Abstract SnO2 thin films were deposited on quartz substrates by pulsed laser deposition and postannealed at different temperatures in oxygen ambience. X-ray diffraction, Hall measurement, and x-ray photoelectron spectroscopy were employed to investigate the properties of the annealed SnO2 thin films. An anomalous electrical transport behavior as a function of the annealing temperature was observed. Both the growth of the crystal grain and oxygen vacancy density variation in the annealing process have been identified to be responsible for the transition of electrical transport properties
Subject Electronic and Magnetic Properties of Condensed Matter; Superconductivity
DOI - identifier 10.1063/1.3481376
Copyright notice © 2010 American Institute of Physics.
ISSN 0003-6951
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