Ab initio electronic properties of dual phosphorus monolayers in silicon

Drumm, D, Per, M, Budi, A, Hollenberg, L and Russo, S 2014, 'Ab initio electronic properties of dual phosphorus monolayers in silicon', Nanoscale Research Letters, vol. 9, 443, pp. 1-10.

Document type: Journal Article
Collection: Journal Articles

Title Ab initio electronic properties of dual phosphorus monolayers in silicon
Author(s) Drumm, D
Per, M
Budi, A
Hollenberg, L
Russo, S
Year 2014
Journal name Nanoscale Research Letters
Volume number 9
Article Number 443
Start page 1
End page 10
Total pages 10
Publisher Springer
Abstract In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon, investigating the fundamental electronic properties of monolayer pairs. Quantitative band splittings and the electronic density are presented, along with effects of the layers' relative alignment and comments on disordered systems, and for the first time, the effective electronic widths of such device components are calculated.
Keyword(s) Ab initio
Density functional theory
Phosphorus in silicon
DOI - identifier 10.1186/1556-276X-9-443
Copyright notice © 2014 Drumm et al.; licensee Springer. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
ISSN 1931-7573
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Citation counts: TR Web of Science Citation Count  Cited 5 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 3 times in Scopus Article | Citations
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