Application of the tris(acetylacetonato)iron(III)/(II) redox couple in p-type dye-sensitized solar cells

Perera, I, Daeneke, T, Makuta, S, Yu, Z, Tachibana, Y, Mishra, A, Bäuerle, P, Ohlin, A, Bach, U and Spiccia, L 2015, 'Application of the tris(acetylacetonato)iron(III)/(II) redox couple in p-type dye-sensitized solar cells', Angewandte Chemie (International Edition), vol. 54, no. 12, pp. 3758-3762.


Document type: Journal Article
Collection: Journal Articles

Title Application of the tris(acetylacetonato)iron(III)/(II) redox couple in p-type dye-sensitized solar cells
Author(s) Perera, I
Daeneke, T
Makuta, S
Yu, Z
Tachibana, Y
Mishra, A
Bäuerle, P
Ohlin, A
Bach, U
Spiccia, L
Year 2015
Journal name Angewandte Chemie (International Edition)
Volume number 54
Issue number 12
Start page 3758
End page 3762
Total pages 5
Publisher Wiley - V C H Verlag GmbH and Co. KGaA
Abstract An electrolyte based on the tris(acetylacetonato)- iron(III)/(II) redox couple ([Fe(acac)3 ] 0/1 ) was developed for p-type dye-sensitized solar cells (DSSCs). Introduction of a NiO blocking layer on the working electrode and the use of chenodeoxycholic acid in the electrolyte enhanced device performance by improving the photocurrent. Devices containing [Fe(acac)3 ] 0/1 and a perylene-thiophene-triphenylamine sensitizer (PMI-6T-TPA) have the highest reported shortcircuit current (JSC=7.65 mA cm2 ), and energy conversion efficiency (2.51%) for p-type DSSCs coupled with a fill factor of 0.51 and an open-circuit voltage VOC=645 mV. Measurement of the kinetics of dye regeneration by the redox mediator revealed that the process is diffusion limited as the dyeregeneration rate constant (1.7 108 m 1 s 1 ) is very close to the maximum theoretical rate constant of 3.3 108 m 1 s 1 . Consequently, a very high dye-regeneration yield (>99%) could be calculated for these devices.
Subject Physical Chemistry of Materials
Nanochemistry and Supramolecular Chemistry
Electrochemistry
Keyword(s) dye-sensitized solar cells
energy conversion
iron
redox chemistry
semiconductors
DOI - identifier 10.1002/anie.201409877
Copyright notice © Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim
ISSN 1433-7851
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