A physical unclonable function with redox-based nanoionic resistive memory

Kim, J, Ahmed, T, Nili, H, Yang, J, Jeong, D, Beckett, P, Sriram, S, Ranasinghe, D and Kavehei, O 2018, 'A physical unclonable function with redox-based nanoionic resistive memory', IEEE Transactions on Information Forensics and Security, vol. 13, no. 2, pp. 437-448.

Document type: Journal Article
Collection: Journal Articles

Title A physical unclonable function with redox-based nanoionic resistive memory
Author(s) Kim, J
Ahmed, T
Nili, H
Yang, J
Jeong, D
Beckett, P
Sriram, S
Ranasinghe, D
Kavehei, O
Year 2018
Journal name IEEE Transactions on Information Forensics and Security
Volume number 13
Issue number 2
Start page 437
End page 448
Total pages 12
Publisher IEEE
Abstract Emerging non-volatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) exhibit a unique set of characteristics that make them promising candidates for the next generation of low-cost, low-power, tiny, and secure physical unclonable functions (PUFs). Their underlying stochastic ionic conduction behavior, intrinsic nonlinear current-voltage characteristics, and their well-known nano-fabrication process variability might normally be considered disadvantageous ReRAM features. However, using a combination of a novel architecture and special peripheral circuitry, this paper exploits these non-idealities in a physical one-way function, nonlinear resistive PUF, potentially applicable to a variety of cyber-physical security applications. We experimentally verify the performance of valency change mechanism (VCM)-based ReRAM in nano-fabricated crossbar arrays across multiple dies and runs. In addition to supporting a massive pool of challenge-response pairs (CRPs), using a combination of experiment and simulation our proposed PUF exhibits a reliability of 98.67%, a uniqueness of 49.85%, a diffuseness of 49.86%, a uniformity of 47.28%, and a bit-aliasing of 47.48%.
Subject Information and Computing Sciences not elsewhere classified
Keyword(s) Physical unclonable function
redox-based resistive switching memory
DOI - identifier 10.1109/TIFS.2017.2756562
Copyright notice © 2017 IEEE
ISSN 1556-6013
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